AlGaN-based ultraviolet LED epitaxial structure and preparation method thereof

• Main Authors: HUANG YINGNAN, YANG YONG, LIU RUISEN, SUN QIAN
• Format: Patent
• Language: Chinese; English
• Published: 31.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an AlGaN-based ultraviolet LED epitaxial structure and a preparation method of the AlGaN-based ultraviolet LED epitaxial structure. The AlGaN-based ultraviolet LED epitaxial structure comprises an N-type Al < b > Ga < 1-b > N layer, a multi-quantum well active region, a P-type Al < c > Ga < 1-c > N electron barrier layer and a P-type GaN contact layer which are sequentially arranged along a specified direction, the multi-quantum well active region comprises a plurality of Al < x > Ga < 1-x > N quantum well layers and a plurality of Al < y > Ga < 1-y > N quantum barrier layers, the Al < x > Ga < 1-x > N quantum well layers and the Al < y > Ga < 1-y > N quantum barrier layers grow alternately, the last Al < x > Ga < 1-x > N quantum well layer in the specified direction is doped with Si, and (x, y) is larger than 0 and smaller than or equal to 1. Compared with the prior art, the light output power of the AlGaN-based ultraviolet LED epitaxial structure disclosed by the invention is remarka