Vacuum process treatment chamber and method for treating substrate by means of vacuum treatment process

• Main Author: WEICHART, J ¨ 1 RGEN
• Format: Patent
• Language: Chinese; English
• Published: 27.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In order to establish a desired gas partial pressure distribution along the surface of such a substrate (5) during vacuum treatment of the substrate (5), a gas is supplied towards the substrate (5) through openings (13) distributed entirely along the entire periphery (P) of the substrate (5). The gas is supplied or removed at a gas line (9) that exclusively communicates with a set of openings (13). 为了在对基底（5）进行真空处理时沿着这样的基底的表面建立所期望气体分压分布，通过完全沿基底（5）的整个周边（P）分布的开口（13）朝向基底（5）供给气体。在与一组开口（13）排他地连通的气体管线（9）处供给或去除所述气体。