Manufacturing model using mask in correcting lithographic mask

• Main Authors: MELVIN LAWRENCE S. III, HOOK KEVIN J
• Format: Patent
• Language: Chinese; English
• Published: 27.05.2022
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

The lithographic process is described by the design of a lithographic mask and the description of a lithographic configuration, which may include lithographic sources, collection/illumination optics, projection optics, resists, and/or subsequent manufacturing steps. The actual lithographic process uses a lithographic mask fabricated from a mask design, which may be different from a nominal mask design. The mask manufacturing model models a process of manufacturing a lithographic mask from a mask design. In general, this is an electron beam (e-beam) process that includes electron beam exposing a resist on a mask blank, treating the exposed resist to form a patterned resist, and etching the mask blank with the patterned resist. Mask manufacturing models are generally used together with other process models to estimate the results of a lithographic process. The mask correction is then applied to the mask design based on the simulation results. 光刻过程通过光刻掩模的设计和光刻配置的描述来描述，其可以包括光刻源、收集/照射光学器件、投影光学器件、抗蚀剂和/或后续制造步骤。实际的光刻