Method for improving growth rate of selective epitaxial growth

• Main Authors: CHU SCHUBERT S, DUBEY, ABUSHEK, CHUNG HUA, HUANG YIIAU, LI XUEBIN
• Format: Patent
• Language: Chinese; English
• Published: 27.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments of the present disclosure generally relate to methods for forming a silicon-doped epitaxial layer on a semiconductor device at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 DEG C to about 800 DEG C, introducing a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a gas comprising halogen into the processing chamber, and depositing a silicon-containing epitaxial layer comprising phosphorus on the substrate, the silicon-containing epitaxial layer has a phosphorus concentration of about 1 * 1021 atoms per cubic centimeter or more, wherein the silicon-containing epitaxial layer is deposited at a chamber pressure of about 150 torr or more. 本公开内容的实施方式一般涉及用于在增大的压力及降低的温度下在半导体装置上形成掺杂硅的外延层的方法。在一个实施方式中，该方法包括将设置在处理腔室内的基板加热至约550℃至约800℃的温度，将包含三氯硅烷(TCS)的硅源、磷源及包含卤素的气体引入处理腔室，且在基板上沉积包含磷的含硅外延层，该含硅外延层具有每立方厘米约1x1021个原子或以上的磷浓度，其中该含硅外延层在约150托或以上的腔室压力下沉积。