Resist underlayer film material, pattern forming method, and resist underlayer film forming method

• Main Authors: NAKAHARA TAKAYOSHI, HARADA YUJI, MIYASHIMA, YUSUKE, KORI DAISUKE
• Format: Patent
• Language: Chinese; English
• Published: 27.05.2022
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

The invention relates to a resist underlayer film material, a pattern forming method, and a resist underlayer film forming method. The present invention provides a resist underlayer film material containing: (A) one or more compounds selected from the group consisting of compounds represented by general formula (1); and (B) an organic solvent. In the formula, W is an n-valent organic group having 2-50 carbon atoms, X is a terminal group structure represented by general formulae (2) and (3), and the relationships 0.70 < = a < = 0.99 and 0.01 < = b < = 0.30 are satisfied, where a and b are the proportions of the structures represented by general formulae (2) and (3). And n is an integer of 1-10. And Z represents a (k + 1)-valent aromatic group having 6-20 carbon atoms. A is a single bond, or-O-(CH2) p-. And k is an integer of 1-5. P is an integer from 1 to 10. L is a single bond or-(CH2) r-. L is 2 or 3, and r is an integer of 1-5. 本发明涉及抗蚀剂下层膜材料、图案形成方法、以及抗蚀剂下层膜形成方法。本发明提供一种抗蚀剂下层膜材料，含有：(A)下列通式(1)表示的化合物中的一种或二种以上；及