All-inorganic perovskite solar cell and preparation method thereof

• Main Authors: YU JIAOXIAN, LIU GUANGXIA, WANG GUODONG, LI QIUBO, ZHANG LEI, CHEN CHENGMIN
• Format: Patent
• Language: Chinese; English
• Published: 24.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an all-inorganic perovskite solar cell and a preparation method thereof. The all-inorganic perovskite solar cell comprises a conductive glass layer, a porous GaN single crystal layer, an all-inorganic perovskite layer, a hole transport layer and an electrode layer which are stacked in sequence, and the porous GaN single crystal layer is prepared from a hexagonal hole-containing GaN single crystal obtained by phosphoric acid corrosion. The GaN single crystal material corroded by the phosphoric acid solution contains part of Al2O3, and the Al2O3 plays a role of a mask, so that the dislocation density can be effectively reduced; according to the structure, the probability of radiation recombination can be improved by increasing overlapping of electron and hole wave functions in perovskite, so that the luminous efficiency is improved. 本发明公开了一种全无机钙钛矿太阳能电池及其制备方法，包括依次叠加设置的导电玻璃层、多孔GaN单晶层、全无机钙钛矿层、空穴传输层和电极层；所述多孔GaN单晶层由磷酸腐蚀得到的含有六方形孔的GaN单晶制备而成。磷酸溶液腐蚀后的GaN单晶材料含有部分Al2O3，Al2O3起到了掩膜的作用，能够有效的降低位错密度；这种结