Method for cutting germanium initial wafer

• Main Authors: HONG QINGFU, HAN DONG, WANG YUANLI
• Format: Patent
• Language: Chinese; English
• Published: 24.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to the technical field of wafer cutting, and particularly discloses a method for cutting an initial germanium wafer. The method for cutting the germanium initial wafer comprises the following steps that S1, a germanium crystal bar to be cut is bonded to a material plate of a multi-wire cutting machine; s2, a multi-wire cutting machine is used for cutting the germanium crystal bar, cutting liquid is loaded on a cutting wire in the multi-wire cutting machine, the cutting liquid is formed by mixing solid particles and polyethylene glycol, the solid particles are a mixture of acrylic acid modified silicon carbide micro powder and aluminum oxide micro powder, and the polyethylene glycol is polyethylene glycol; the acrylic acid modified silicon carbide micro-powder is prepared by grafting and modifying acrylic acid on the surface of silicon carbide micro-powder; and S3, the cut germanium cutting initial wafer is placed in a cleaning solution which is alkali liquor of triethylamine and sodium h