Electron source for generating electron beam

The invention relates to an electron source (2) for generating an electron beam (8), having a cathode (1) and an anode (4) in the form of graphene layers (6, 12) epitaxially grown from a silicon carbide substrate (5). The invention is suitable for the overall preparation of a miniaturized high-energ...

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Bibliographic Details
Main Authors KRIEG MARKUS, OTT CHRISTIAN, WEBER HEIKE
Format Patent
LanguageChinese
English
Published 20.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:The invention relates to an electron source (2) for generating an electron beam (8), having a cathode (1) and an anode (4) in the form of graphene layers (6, 12) epitaxially grown from a silicon carbide substrate (5). The invention is suitable for the overall preparation of a miniaturized high-energy focusing electron beam source, including the application of the electron beam source as an on-chip X-ray source. All elements can be prepared from a single silicon carbide chip or on a single silicon carbide chip. 本发明涉及一种用于产生电子束(8)的电子源(2)，其具有由碳化硅衬底(5)外延生长的以石墨烯层(6,12)形式的阴极(1)和阳极(4)。本发明适用于小型化高能聚焦电子束源的整体制备，包括其用作片上X射线源。所有元件都可以由单个碳化硅芯片或在单个碳化硅芯片上制备。
Bibliography:Application Number: CN202080067855