Method for forming InN film on SiC substrate

• Main Authors: XU LIANG, ZHAN JUNJIE, YANG MINGYI, CHEN SUCHUN, MENG XIUQING, YU YAJUN
• Format: Patent
• Language: Chinese; English
• Published: 20.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention relates to a method for forming an InN film on a SiC substrate. According to the method, SiC with relatively stable chemical properties and physical properties is adopted as a substrate, after a SiN buffer layer is formed on the surface of the substrate, the InN thin film is formed at a relatively low temperature through electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD), impurity ions are not mixed into the formed InN thin film, and the quality is relatively high. 本发明涉及一种在SiC衬底上形成InN薄膜的方法。该方法采用化学性质和物理性质相对稳定的SiC作为衬底，并在其表面形成SiN缓冲层后，通过电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)在较低温度下形成InN薄膜，所形成的InN薄膜不存在杂质离子混入，质量较高。