Support bracket apparatus and method for substrate processing

• Main Authors: SUHAIL ANWAR, SHINDE RANJIT INDRAJIT, FURUTA GAKU
• Format: Patent
• Language: Chinese; English
• Published: 17.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Aspects of the present disclosure relate to support bracket apparatuses and methods for substrate processing, such as plasma processing chambers. In one embodiment, a substrate processing chamber includes a chamber body. The chamber body includes one or more side walls, and each of the one or more side walls includes an inner surface. The substrate processing chamber further includes: a susceptor having a support surface; a processing space, wherein the processing space is arranged above the base; and a lower space, wherein the lower space is arranged below the base. The substrate processing chamber also includes a bracket mounted to the inner surface of a side wall of the one or more side walls. The stent includes a first end, a second end, and a longitudinal length between the first end and the second end. The stent also includes a gas opening formed in the stent between the first end and the second end. The gas opening allows gas to flow through the gas opening. 本公开内容的方面涉及用于基板处理的支撑支架设备和方法，诸如等离子体处理腔室。在一个实施方