Double-sided TOPCon photovoltaic cell based on n-type silicon substrate

• Main Authors: QIAO DAYONG, LIU DAWEI, HU JICHAO, GUO YONGGANG, SONG ZHICHENG, NI YUFENG, MA SHAOHUA
• Format: Patent
• Language: Chinese; English
• Published: 17.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a double-sided TOPCon photovoltaic cell based on an n-type silicon substrate. The double-sided TOPCon photovoltaic cell comprises a first tunneling layer, an n-type doped polycrystalline silicon layer, a first passivation anti-reflection layer and a back electrode which are sequentially arranged on the back surface of an n-type silicon wafer, the double-sided TOPCon photovoltaic cell further comprises a p-type doped emitter layer, a second tunneling layer, a p-type CuAlO2 layer, a second passivation anti-reflection layer and a front electrode which are sequentially arranged on the front face of the n-type silicon wafer. In the technical scheme of the invention, in the front structure of the double-sided n-type TOPCon photovoltaic cell, a p-type CuAlO2 layer is adopted to replace an existing heavily doped polycrystalline silicon layer, and the p-type CuAlO2 layer has a relatively large forbidden bandwidth (gt; and the film has higher transmittance in a visible light range, and can impro