Double-sided TOPCon photovoltaic cell based on p-type silicon substrate

• Main Authors: QIAO DAYONG, LIU DAWEI, HU JICHAO, GUO YONGGANG, SONG ZHICHENG, NI YUFENG, MA SHAOHUA
• Format: Patent
• Language: Chinese; English
• Published: 17.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a double-sided TOPCon photovoltaic cell based on a p-type silicon substrate. The double-sided TOPCon photovoltaic cell comprises a first tunneling layer, a p-type doped polycrystalline silicon layer, a first passivation anti-reflection layer and a back electrode which are sequentially arranged on the back surface of a p-type silicon wafer, the double-sided TOPCon photovoltaic cell further comprises an n-type doped emitter layer, a second tunneling layer, an n-type doped Ga2O3 layer, a second passivation anti-reflection layer and a front electrode which are sequentially arranged on the front face of the p-type silicon wafer. According to the technical scheme, the n-type doped Ga2O3 layer is adopted in the front structure of the double-sided p-type TOPCon photovoltaic cell to replace an existing heavily-doped polycrystalline silicon layer, and the n-type doped Ga2O3 layer has a large forbidden bandwidth (about 4.8 eV), has higher transmittance in a visible light range and can improve the