Semiconductor laser for outputting picosecond pulse and continuous composite laser in single beam

The invention provides a semiconductor laser capable of outputting picosecond pulse and continuous composite laser in a single beam. The semiconductor laser comprises a laser epitaxial structure, and a picosecond pulse laser seed source, a continuous laser seed source, a Y-shaped waveguide beam comb...

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Bibliographic Details
Main Authors DU WEICHUAN, TANG CHUN, HE LIN'AN, HE YUWEN, ZHOU KUN, TAKAMATSU MAKOTO, LI YI
Format Patent
LanguageChinese
English
Published 13.05.2022
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Summary:The invention provides a semiconductor laser capable of outputting picosecond pulse and continuous composite laser in a single beam. The semiconductor laser comprises a laser epitaxial structure, and a picosecond pulse laser seed source, a continuous laser seed source, a Y-shaped waveguide beam combining structure and a conical power amplifier which are arranged on the laser epitaxial structure; the Y-shaped waveguide beam combining structure is provided with a first rear end, a second rear end and a front end; the picosecond pulse laser seed source comprises a ridge-shaped pulse gain part, a ridge-shaped saturable absorber and a first grating which are arranged in sequence, and the first grating is aligned with the first rear end; the continuous laser seed source comprises a ridge-shaped continuous gain part and a second grating which are arranged in sequence, and the second grating is aligned with the second rear end; the smaller end of the tapered power amplifier is aligned with the front end. According to
Bibliography:Application Number: CN202111612121