Semiconductor laser for outputting picosecond pulse and continuous composite laser in single beam
The invention provides a semiconductor laser capable of outputting picosecond pulse and continuous composite laser in a single beam. The semiconductor laser comprises a laser epitaxial structure, and a picosecond pulse laser seed source, a continuous laser seed source, a Y-shaped waveguide beam comb...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
13.05.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a semiconductor laser capable of outputting picosecond pulse and continuous composite laser in a single beam. The semiconductor laser comprises a laser epitaxial structure, and a picosecond pulse laser seed source, a continuous laser seed source, a Y-shaped waveguide beam combining structure and a conical power amplifier which are arranged on the laser epitaxial structure; the Y-shaped waveguide beam combining structure is provided with a first rear end, a second rear end and a front end; the picosecond pulse laser seed source comprises a ridge-shaped pulse gain part, a ridge-shaped saturable absorber and a first grating which are arranged in sequence, and the first grating is aligned with the first rear end; the continuous laser seed source comprises a ridge-shaped continuous gain part and a second grating which are arranged in sequence, and the second grating is aligned with the second rear end; the smaller end of the tapered power amplifier is aligned with the front end. According to |
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Bibliography: | Application Number: CN202111612121 |