High-rate high-nickel single crystal NCA precursor and preparation method thereof
The invention discloses a preparation method of a high-magnification high-nickel single crystal NCA precursor. The preparation method comprises the step of adding a hydrogen peroxide solution in a coprecipitation reaction process of the NCA precursor, the addition mode of the hydrogen peroxide solut...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
10.05.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a preparation method of a high-magnification high-nickel single crystal NCA precursor. The preparation method comprises the step of adding a hydrogen peroxide solution in a coprecipitation reaction process of the NCA precursor, the addition mode of the hydrogen peroxide solution is as follows: when the particle size reaches 70%-90% of the particle size required by the process, the hydrogen peroxide solution is intermittently added to stabilize the oxygen content in the reaction system to be 1000-30000 ppm until the particle size reaches the process requirement. The method has the advantages that the porosity of the NCA precursor structure can be remarkably improved, the rate capability of the positive electrode material is improved, and the production cost is reduced.
本发明公开了一种高倍率高镍单晶NCA前驱体的制备方法,包括在NCA前驱体共沉淀反应过程中加入过氧化氢溶液的步骤;所述过氧化氢溶液的加入方式为:当反应至粒度达到工艺要求粒度的70%~90%时,间歇加入过氧化氢溶液以稳定反应体系中氧含量为1000~30000ppm,直至粒度达到工艺要求。其优点是:能够显著提高NCA前驱体结构孔隙率,提高正极材料倍率性能并降低生产成本。 |
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Bibliography: | Application Number: CN202111664412 |