Memory cells, capacitive memory structures and methods thereof

• Main Authors: POLAKOWSKI PAWEL, MUELLER STEPHEN F
• Format: Patent
• Language: Chinese; English
• Published: 06.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to various aspects, there is provided a memory cell comprising: a first electrode; a second electrode; and a memory structure disposed between the first electrode and the second electrode, the first electrode, the second electrode, and the memory structure forming a memory capacitor, in which at least one of the first electrode and the second electrode includes: a first electrode layer including a first material having a first microstructure; a functional layer in direct contact with the first electrode layer; and a second electrode layer in direct contact with the functional layer, the second electrode layer including a second material having a second microstructure different from the first microstructure. 根据各个方面，提供了一种存储器单元，该存储器单元包括：第一电极；第二电极；以及设置在第一电极与第二电极之间的存储器结构，第一电极、第二电极和存储器结构形成存储器电容器，其中，第一电极和第二电极中的至少一个包括：包括具有第一微结构的第一材料的第一电极层；与第一电极层直接接触的功能层；以及与功能层直接接触的第二电极层，第二电极层包括具有不同于第一微结构的第二微结构的第二材料。