Patterned halogen perovskite thin film and preparation method and application thereof

• Main Authors: TUN GUANHUA, GENG XIANGSHUN, XIE DAN, YANG IN YOUNG, ZHANG HAINAN, TAN KEN, REN TIANLING
• Format: Patent
• Language: Chinese; English
• Published: 29.04.2022
• Subjects: ELECTRICITY

The invention provides a patterned halogen perovskite thin film and a preparation method and application thereof. The method comprises the following steps: (1) forming a photoresist thin film on a halogen perovskite thin film; (2) exposing the photoresist film obtained in the step (1); (3) developing the photoresist film obtained in the step (2); (4) placing the halogen perovskite thin film on which the photoresist thin film is formed in the step (3) in a halogen acid solution for etching; and (5) putting the halogen perovskite thin film with the residual photoresist thin film obtained in the step (4) into a mixture of halogen perovskite and an organic solvent for photoresist removal, and drying to obtain the patterned halogen perovskite thin film. Therefore, the preparation method can be compatible with a modern microelectronic process, the quality and the property of the halogen perovskite film are basically unchanged before and after photoresist removal, and the halogen perovskite film has wide application