Wet processing method for realizing high-temperature chemical etching reaction

• Main Authors: DENG XINFU, CHEN DINGKUN, LIAO SHIBAO
• Format: Patent
• Language: Chinese; English
• Published: 29.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a wet processing method for realizing a high-temperature chemical etching reaction, and the method specifically comprises the following steps: S1, controlling a robot to place a wafer on a placement table, and controlling a ventilation device on the placement table to output a high-pressure air flow, so as to enable the wafer to suspend on the placement table; and S2, spraying a first cleaning solution to the surface of the wafer for high-temperature chemical etching, spraying a second cleaning solution to the side surface of the wafer for wet processing, and controlling the robot to take down the wafer. The method has the beneficial effects that the high-pressure air flow is output through the ventilation equipment to enable the wafer to be in a suspended state, non-contact cleaning is performed on the wafer, the first cleaning liquid is sprayed on the upper surface of the wafer for high-temperature chemical etching, the second cleaning liquid is sprayed on the side surface of the wafe