Method for estimating reference interval of on-orbit single event upset rate of device

• Main Authors: ZHENG HONGCHAO, XU LEIPEI, CHEN LEI, DONG TAO, LI ZHE, ZHANG JIANPENG, WANG HUANGWEI, WU YONGJUN, WANG LIANG, GOU CHUNLIANG, ZHANG XU, BI XIAO
• Format: Patent
• Language: Chinese; English
• Published: 29.04.2022
• Subjects: CALCULATING; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; PHYSICS

The invention discloses a method for estimating an on-orbit single event upset rate reference interval of a device, and the method comprises the steps: obtaining test data of a single event upset cross section (sigma) and an incident ion parameter (LET) of the device through carrying out a ground heavy ion irradiation test; estimating interval ranges of parameters such as a single event upset saturation cross section (sigma sat), a single event upset LET threshold value (LETth), a device sensitive area depth (d), a device funnel length (F) and the like; adjusting each parameter in the pre-estimation range, fitting by using a Weibull curve, and carrying out simulation by using a Monte Carlo simulation tool to obtain an in-orbit single event upset rate; and finally, obtaining a change relationship between each parameter and the average merit figure of the in-orbit upset rate, thereby determining a reference interval of the in-orbit single event upset rate of the device. According to the method, the reference in