MEMORY CELL AND METHOD THEREOF

• Main Authors: POLAKOWSKI PAWEL, MUELLER STEPHEN F, OCKER JOCHEN
• Format: Patent
• Language: Chinese; English
• Published: 22.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to various aspects, there is provided a memory cell comprising: a capacitive memory structure comprising a first electrode; a field effect transistor structure including a gate electrode; one or more insulator layers; one or more source/drain contact structures embedded in the one or more insulator layers to electrically contact the field effect transistor structures; and a connection structure embedded in at least one of the one or more insulator layers, where the connection structure conductively connects the first electrode of the capacitive memory structure and the gate electrode of the field effect transistor structure to each other and is electrically floating, and one or more additional electrical insulation structures, the first electrode, the gate electrode, and the connection structure are configured to prevent charging caused by leakage current of the first electrode, the gate electrode, and the connection structure. 根据各个方面，提供一种存储器单元，该存储器单元包括：电容存储器结构，包括第一电极；场效应晶体管结构，包括栅极电极；一个或多个绝缘体层；一个或多个