Parameter acquisition device and method, ion implantation method and semiconductor process equipment

• Main Authors: ZHU HONGBO, TAO ZHUO
• Format: Patent
• Language: Chinese; English
• Published: 22.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a parameter acquisition device and method, an ion implantation method and semiconductor process equipment. The parameter acquisition device comprises a baffle plate, a Faraday cup and a current detection device, wherein the baffle plate comprises a slit; the baffle plate is arranged between an ion beam source for generating an ion beam current and the Faraday cup, and is configured to move in a direction perpendicular to the height direction of the Faraday cup and block the ion beam current, and the slit is used for allowing a part of the ion beam current to pass through; the Faraday cup is configured to generate current when receiving the ion beam current; the current detection device is configured to detect the current of the Faraday cup, and the current is used for representing the current density corresponding to the Faraday cup. According to the method, the current density corresponding to the Faraday cup can be quickly and accurately obtained, so that related process parameters a