Preparation method of silicon substrate polished wafer for bonding process

• Main Authors: HAN PING, BIAN YONGZHI, WANG XIN, ZHU XIAOTONG, XU JIPING, LI JUNHONG, LIN LIN, YAN JUNYAO, ZHANG JIANHUA, NING YONGDUO, ZHONG GENGHANG, TIAN FENGGE
• Format: Patent
• Language: Chinese; English
• Published: 15.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TOOLS FOR GRINDING, BUFFING, OR SHARPENING; TRANSPORTING; WORKING CEMENT, CLAY, OR STONE; WORKING STONE OR STONE-LIKE MATERIALS

The invention discloses a preparation method of a silicon substrate polished wafer for a bonding process, which comprises the following steps: (1) crystal pulling is carried out by adopting a magnetic field crystal pulling method, the magnetic field type is a horizontal magnetic field, the magnetic field intensity is 1000-5000 gauss, the magnetic field shape is saddle-shaped, the crystal transition is 5-15 rpm, and the crucible transition is 0.1-3 rpm; the fluctuation range of +/-0.5 mm of the liquid level position during crystal growth is controlled; (2) barreling and linear cutting are carried out; (3) chamfering outline design and machining are carried out, four times of chamfering are carried out, rough chamfering is carried out twice through a 800 # guide wheel, fine chamfering is carried out twice through a 1000 #-3000 # guide wheel, asymmetric chamfering is carried out, the outline breadth X1 is larger than 600 micrometers, and the outline breadth X2 is smaller than 300 micrometers; (4) grinding corros