Semiconductor device

• Main Authors: YAMASHITA YUSUKE, KATO TAKEHIRO, MISUMI TADASHI, UEHARA JUNICHI
• Format: Patent
• Language: Chinese; English
• Published: 12.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sensing region in which a sensing switching element structure is formed, and a peripheral region located around the active region and the current sensing region. The semiconductor substrate is in the lt; 11 to 20 gt; and the 4H-SiC substrate has an off angle in the direction. The current sensing area is along the lt; 1 to 100 gt; the active region is disposed in a range in which the active region is not present when viewed in the direction. 半导体装置具备半导体衬底，该半导体衬底具有形成有主开关元件构造的有源区域、形成有感测开关元件构造的电流感测区域、以及位于上述有源区域和上述电流感测区域的周围的周边区域。上述半导体衬底是在<11－20>方向上具有偏离角的4H－SiC衬底。上述电流感测区域在沿着<1－100>方向观察时配置在不存在上述有源区域的范围中。