Semiconductor device

The present disclosure provides a semiconductor device, in particular, a method and a device including a magnetic tunneling junction (MTJ) element, and a method and a device including a magnetic tunneling junction (MTJ) element. The first spacer layer adjoins a sidewall of the MTJ element. The first...

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Bibliographic Details
Main Authors CHEN DIANHAO, SHEN XIANGGU
Format Patent
LanguageChinese
English
Published 12.04.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure provides a semiconductor device, in particular, a method and a device including a magnetic tunneling junction (MTJ) element, and a method and a device including a magnetic tunneling junction (MTJ) element. The first spacer layer adjoins a sidewall of the MTJ element. The first spacer layer has a low dielectric constant (low k) oxide composition. A second spacer layer is disposed on the first spacer layer and has a low-k nitride composition. 本公开提供了一种半导体装置，特别是包括磁性穿隧接面(magnetictunneling junction，MTJ)元件的方法及装置。第一间隔层邻接MTJ元件的侧壁。第一间隔层具有低介电常数(低k)的氧化物组成。第二间隔层设置在第一间隔层上并且具有低k氮化物组成。
Bibliography:Application Number: CN202110842967