Semiconductor device and manufacturing method thereof

• Main Authors: PARK JONG-SOON, PARK JONGUL, LEE BOK-YOUNG, DING HAIJIAN, LEE JEONG YUN, LEE HYUNG GU, JUNG YEON-DO
• Format: Patent
• Language: Chinese; English
• Published: 12.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes: a device isolation layer on a substrate; a pattern group including fin patterns extending in a first direction; and a gate structure extending in the second direction to intersect the fin pattern. A first pattern group of the pattern groups may include a first fin pattern. At least a portion of the first fin pattern may be arranged at a first pitch in the second direction. The first pattern group may include a first flat portion extending from the first recessed portion. A central axis of the first recess may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first flat portion may have a first width in the second direction, the first width being greater than the first pitch. The first distance may be from about 0.8 to about 1.2 times the first pitch. 一种半导体器件，包括：位于衬底上的器件隔离层；图案组，包括在第一方向上延伸的鳍图案；以及栅结构，在第二方向上延伸以与鳍图案相交。图案组中的第一图案组可以包括第一鳍图案。第一鳍图案的至少一部分可以在第二方向上以第一间距布置。第一图案组可以包括从第一凹陷部延伸的第一平坦部。第一凹陷部的中心轴可以在第二方向上与第一鳍图案中的一个