SGT device for improving wafer warping and manufacturing method thereof

• Main Authors: ZHAO ZHI, YANG QIUDONG
• Format: Patent
• Language: Chinese; English
• Published: 12.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides an SGT device for improving wafer warping and a manufacturing method, a source region of the device comprises a plurality of cellular regions, grooves in the cellular regions are strip-shaped grooves, and the directions of the grooves in the adjacent cellular regions are perpendicular to each other. The manufacturing method comprises the steps that an epitaxial layer is provided, a plurality of cellular areas are formed on the epitaxial layer, and the directions of groove sets of every two adjacent cellular areas are perpendicular to each other; the formation in the groove group further forms a gate structure; and forming a source electrode and a drain electrode in the epitaxial layer at the two sides of the gate structure respectively. According to the invention, the design of the strip-shaped grooves with the same direction in the cellular area is changed into several subareas with mutually vertical directions, so that the stress direction is balanced, the warping degree of the wafer