Ion implantation method of wafer

• Main Authors: LAN YUGUO, LI MEIXIA, CHEN ZHANFEN
• Format: Patent
• Language: Chinese; English
• Published: 12.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides an ion implantation method for a wafer. The ion implantation method comprises the following steps: placing the wafer on a wafer harrow disc of an ion implantation machine; n times of ion implantation are sequentially carried out on the wafer until the preset ion implantation dosage is reached, N is an integer larger than 1, after each time of ion implantation is completed, the wafer is rotated by 360/N degrees in the same direction around the center axis of the wafer, then the next time of ion implantation is carried out, and the center axis passes through the center of the wafer and is perpendicular to the plane where the wafer is located. According to the ion implantation method of the wafer, the flow of the ion implantation technology is improved, the ion implantation process is divided into multiple times, after each time of ion implantation is completed, the wafer is rotated by 360/N degrees, and then the next time of ion implantation is carried out, so that the influence of beam c