Spatially tunable deposition to compensate in wafer differential bending

• Main Authors: MADELOT, MATHIEU, VENTILA, ADRIANA, LEE JAMES F, YIN XIN, WILLIAMS BRIAN JOSEPH, SHAIKH FAYAZ A, NICK RAY LINEBARGER JR
• Format: Patent
• Language: Chinese; English
• Published: 29.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A plasma processing chamber for depositing a film on an underside surface of a wafer includes a showerhead susceptor. The showerhead base includes a first partition and a second partition. An upper separator fin is disposed above the top surface of the showerhead base, and a lower separator fin is disposed below the top surface of the showerhead base and aligned with the upper separator fin. The first partition is configured for depositing a first film to an underside surface of the wafer, and the second partition is configured for depositing a second film to the underside surface of the wafer. In another embodiment, the top surface of the showerhead base may be configured to receive a masking plate rather than an upper separator fin. The masking plate is provided with a first region having an opening and a masked second region. The first region is used to provide a process gas to a portion of the underside surface of the wafer for depositing a film. 一种用于在晶片的下侧表面上沉积膜的等离子体加工室，包括喷头基座。喷头基座包括第一分区和第二分区。上分离器翅片设置在喷头