Electric leakage detection circuit
The invention discloses an electric leakage detection circuit, and the circuit comprises a power device which comprises a first transistor, a second transistor and a third transistor which are located in a high-voltage domain, the first transistor and the second transistor are located in a body diod...
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| Main Authors | , |
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| Format | Patent |
| Language | Chinese English |
| Published |
25.03.2022
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| Subjects | |
| Online Access | Get full text |
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| Summary: | The invention discloses an electric leakage detection circuit, and the circuit comprises a power device which comprises a first transistor, a second transistor and a third transistor which are located in a high-voltage domain, the first transistor and the second transistor are located in a body diode leakage current loop between an SW pin and a reference potential, and the third transistor is located between a VIN pin and the SW pin; a driving unit including a first driver for driving the first transistor and a second driver for driving the third transistor; and the electric leakage control unit is used for detecting junction electric leakage of the first transistor, outputting a first control signal to turn off the first transistor and outputting a second control signal to turn on the third transistor. Junction electric leakage detection can be carried out on the power device, when the leakage current reaches a certain value, the power device is turned off, and electric leakage of the power device is avoided |
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| Bibliography: | Application Number: CN202111544181 |