Omnibearing Schottky contact groove type semiconductor device and manufacturing method thereof

• Main Authors: SUN BOTAO, ZHANG CHEN, XU MIAOLING, QIU YANLI, XIU DEQI, LI TIANYUN
• Format: Patent
• Language: Chinese; English
• Published: 22.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The embodiment of the invention provides an omni-directional Schottky contact groove type semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a semiconductor body of a first doping type, the upper surface of which is provided with a plurality of grooves; a plurality of injection regions of a second doping type, which are arranged at the bottom of the trench at intervals and extend into the semiconductor body; and the metal layer is in contact with the upper surface of the semiconductor body, the side wall of the groove and the bottom wall of the groove to form Schottky contact. 本申请的实施例提供了一种全方位肖特基接触的沟槽型半导体器件及其制造方法，该半导体器件包括：第一掺杂类型的半导体本体，其上表面具有多条沟槽；第二掺杂类型的多个注入区域，其被间隔地设置于所述沟槽的底部且延伸至所述半导体本体内；金属层，其与所述半导体本体的上表面、所述沟槽的侧壁和所述沟槽的底壁接触形成肖特基接触。