Passivation contact crystalline silicon cell without edge cutting loss and preparation method thereof

• Main Authors: YUAN QINGDONG, ZHOU HAILONG, CAI XIA, ZHANG SHUDE, QIAN HONGQIANG, JING RONGRONG
• Format: Patent
• Language: Chinese; English
• Published: 15.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a passivation contact crystal silicon cell without edge cutting loss and a preparation method thereof, and belongs to the technical field of cell preparation. In the step of producing the passivation contact crystal silicon cell, a cutting step is carried out firstly, a silicon wafer is divided into at least two pieces, and/or a cutting groove is formed in the surface of the silicon wafer through cutting. According to the preparation method of the passivation contact crystal silicon cell without edge cutting loss, provided by the invention, the cutting process of the cell is optimized and changed into the cutting of the silicon wafer, and the cutting loss of the cell is fundamentally solved before the production process of the passivation contact cell. The cutting surface is subjected to chemical corrosion repair and passivation repair through a back surface treatment process step, a front surface passivation step, a back surface passivation step and the like, so that the cutting surf