Apparatus for manufacturing semiconductor substrate provided with temperature gradient inversion means, and method for manufacturing semiconductor substrate

• Main Author: KANEKO TADAAKI
• Format: Patent
• Language: Chinese; English
• Published: 11.03.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides a method for etching and growing a semiconductor substrate in the same device system and a device thereof. A method for manufacturing a semiconductor substrate includes: a first heating step of heating a heat treatment space in which a semiconductor substrate and a transceiver that transports atoms to each other with the semiconductor substrate are housed so as to form a temperature gradient between the semiconductor substrate and the transceiver; and a second heating step in which heating is performed by reversing the level of the temperature gradient. 本发明提供一种在同一装置系统中进行半导体衬底的蚀刻和生长的方法及其装置。一种半导体衬底的制造方法包括：第一加热步骤，对收纳有半导体衬底和与所述半导体衬底相互输送原子的收发体的热处理空间进行加热，以在所述半导体衬底和所述收发体之间形成温度梯度；以及第二加热步骤，使所述温度梯度高低反转来进行加热。