Method for manufacturing semiconductor substrate, device for manufacturing same, and epitaxial growth method

• Main Author: KANEKO TADAAKI
• Format: Patent
• Language: Chinese; English
• Published: 11.03.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The purpose of the present invention is to provide a novel method and apparatus for manufacturing a semiconductor substrate. A method for manufacturing a semiconductor substrate and a manufacturing apparatus for the method are implemented, the method comprising: a setting step of setting a plurality of objects to be processed having a semiconductor substrate in a stacked manner; and a heating step of heating each of the plurality of objects to be processed so that a temperature gradient is formed in the thickness direction of the semiconductor substrate. 本发明的目的是提供一种新颖的半导体衬底的制造方法和制造装置。实现了一种半导体衬底的制造方法及用于该方法的制造装置，所述制造方法包括：设置步骤，将具有半导体衬底的多个被处理体以堆叠的方式设置；和加热步骤，对多个所述被处理体的每一个进行加热，使得在所述半导体衬底的厚度方向上形成温度梯度。