Method for producing SiC substrate, device for producing same, and epitaxial growth method

• Main Author: KANEKO TADAAKI
• Format: Patent
• Language: Chinese; English
• Published: 11.03.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The problem to be solved by the present invention is to provide a novel method for manufacturing a SiC substrate and an apparatus for manufacturing the same. Provided are a method for producing SiC substrates and a device for producing the same, wherein two SiC substrates facing each other are heated and a raw material is transferred from one SiC single crystal substrate to the other SiC single crystal substrate. Consequently, the surfaces of the opposed SiC single crystal substrates can be used as raw materials for crystal growth, and thus a method for producing a SiC substrate with excellent economical efficiency can be achieved. 本发明的要解决的问题是提供一种新颖的SiC衬底的制造方法及其制造装置。实现了一种加热相对的两个SiC衬底并将原料从一个SiC单晶衬底输送到另一个SiC单晶衬底的SiC衬底的制造方法及其制造装置。由此，可以将相对的SiC单晶衬底表面彼此用作晶体生长的原料，因而可以实现经济性优异的SiC衬底的制造方法。