Magnetic tunnel junction with low power consumption and high storage density

• Main Authors: MENG HAO, CHI KEQUN
• Format: Patent
• Language: Chinese; English
• Published: 11.03.2022
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention discloses a magnetic tunnel junction with low power consumption and high storage density, which comprises a free layer and a barrier layer, an interface is generated between the free layer and the barrier layer, and an annular defect structure is formed by etching the edge of the interface. The structure is provided with the annular defect structure at the interface of the free layer and the barrier layer, and the interface induced perpendicular anisotropy of the annular defect structure is low, so that the overall perpendicular anisotropy of the free layer is reduced, and meanwhile, an in-plane magnetization direction is formed at the edge of the magnetic tunnel junction, so that the critical flip current is reduced; and the magnetic turnover speed, the storage density and the operation speed are improved, and the power consumption is reduced. 本发明公开了一种具有低功耗和高存储密度的磁性隧道结，包括自由层和势垒层，自由层和势垒层之间生成界面，并通过刻蚀处理界面的边缘形成环状缺陷结构。该结构在自由层和势垒层界面处具有环状缺陷结构，环状缺陷结构的界面诱导垂直各向异性较低，从而使自由层整体垂直各向异性能下降，同时在磁性隧道结边缘处形成面内磁化方向，有