Preparation method of rare earth manganese oxide film for near room temperature infrared imaging

• Main Authors: YANG SHENG'AN, CHEN QINGMING, ZHANG HUI, MA JI
• Format: Patent
• Language: Chinese; English
• Published: 08.03.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a preparation method of a rare earth manganese oxide film for near-room-temperature infrared imaging. The preparation method specifically comprises the following steps: high-temperature annealing of a substrate, reduction of the substrate, activation of the substrate, preparation of a precursor, purification of the precursor, spin coating of the substrate, heat treatment of the substrate and sintering of the film. According to the method disclosed by the invention, the rare earth manganese oxide thin film with large area, high flatness and high TCR value in a near room temperature region range is prepared while the component function of the rare earth manganese oxide thin film is highly consistent with a design value, the performance basis of the rare earth manganese oxide thin film serving as an infrared detection imaging device is enhanced, and the selection range of an infrared detector sensitive material is further widened. 本发明公开了近室温红外成像用稀土锰氧化物薄膜制备方法，具体包括如下步骤：基底高温退火、基底还原、基底活化、前驱体配置