Memory manufacturing method and memory

• Main Authors: ZHOU ZHEN, PING ER-XUAN, ZHANG LINGGUO
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2022
• Subjects: ELECTRICITY

The embodiment of the invention provides a manufacturing method of a memory and the memory. The manufacturing method of the memory comprises the following steps: providing a substrate and a bit line contact layer; forming a dummy bit line structure at the top of the bit line contact layer; forming a sacrificial layer filling an area between the adjacent dummy bit line structures, wherein the sacrificial layer is located on the side walls of the dummy bit line structures and the side walls of the bit line contact layers; after the sacrificial layer is formed, the dummy bit line structure is removed, and a through hole for exposing the bit line contact layer is formed; and forming a bit line conductive part which fills the through hole and covers the bit line contact layer. According to the embodiment of the invention, the through hole is filled, so that impurities generated by etching are not left in the formed bit line conductive part, the resistance of the bit line conductive part is further reduced, and the