Semiconductor-based Fenton catalyst with multichannel charge transfer and preparation method and application thereof
The invention discloses a semiconductor-based Fenton catalyst with multichannel charge transfer, which is prepared by uniformly growing Fe2O3 quantum dots on the surface of a compound prepared from g-C3N4 and reduced graphene oxide by taking FeCl3. 6H2O as an iron source. The invention also provides...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.03.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a semiconductor-based Fenton catalyst with multichannel charge transfer, which is prepared by uniformly growing Fe2O3 quantum dots on the surface of a compound prepared from g-C3N4 and reduced graphene oxide by taking FeCl3. 6H2O as an iron source. The invention also provides a preparation method and application of the semiconductor-based Fenton catalyst with multichannel charge transfer. The g-C3N4/rGO/Fe2O3QDs light-Fenton catalyst has the following outstanding effects: (1) the novel g-C3N4/rGO/Fe2O3QDs light-Fenton catalyst with multichannel charge transfer is designed and synthesized, and the catalytic activity of the existing light-Fenton catalyst is effectively improved; (2) photo-generated charges can be transferred on an interface through multiple channels, Fe (III)/Fe (II) conversion is better promoted, and the catalytic degradation efficiency of organic pollutants is improved; (3) raw materials are cheap, simple and easily available, and the preparation process is simple, con |
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Bibliography: | Application Number: CN202111457098 |