Light emitting diode and light emitting device

• Main Authors: WANG HUINING, XIA HONGWEI, LIU SHIWEI, ZHUO JIALI, LIN SUHUI, MA QUANYANG, ZHANG ZHONGYING, YANG SHUO
• Format: Patent
• Language: Chinese; English
• Published: 25.02.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light-emitting diode which comprises an epitaxial structure, a transparent current expansion layer, a first electrode and a second electrode, the epitaxial structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked in sequence, and the transparent current expansion layer is located on the second semiconductor layer. The first electrode and the second electrode are electrically connected with the first semiconductor layer and the transparent current expansion layer respectively, the transparent current expansion layer comprises a second transparent current expansion layer and a first transparent current expansion layer which are stacked in sequence, and Al metal is doped in the first transparent current expansion layer. By means of the arrangement, the electrostatic protection capability of the light-emitting diode can be effectively improved, and the light-emitting diode has high anti-ESD capability. 本发明提供一种发光二极管，其包括外延结构、