TREATMENTS TO ENHANCE MATERIAL STRUCTURES

• Main Authors: SATO TATSUYA, CHU DAVID, LIU PATRICIA M, CHU CHARLES, CHEN SHIHUNG, BEVAN MALCOLM J, SWENBERG JOHANES, HUNG STEVEN C
• Format: Patent
• Language: Chinese; English
• Published: 18.02.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate. 可实行处理方法以生产可包括高k介电材料的半导体结构。方法可包括将含氮前驱物或含氧前驱物输送至在半导体处理腔室中含有的基板。方法可包括以含氮前驱物或含氧前驱物在基板的暴露的表面上形成反应配体。方法还可包括形成覆盖基板的高k介电材料。