Broadband low-phase-noise integrated photo-production microwave source chip and system based on lithium niobate film
The invention provides a broadband low-phase-noise integrated photo-production microwave source chip based on a lithium niobate film. The broadband low-phase-noise integrated photo-production microwave source chip comprises a lithium niobate optical waveguide arranged on the lithium niobate film. Th...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
15.02.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a broadband low-phase-noise integrated photo-production microwave source chip based on a lithium niobate film. The broadband low-phase-noise integrated photo-production microwave source chip comprises a lithium niobate optical waveguide arranged on the lithium niobate film. The lithium niobate optical waveguide comprises a spot-size conversion waveguide, a first straight waveguide, a first bent waveguide, a first Y-branch waveguide and a second Y-branch waveguide; a fourth straight waveguide and a fifth straight waveguide are connected in parallel between the first Y-branch waveguide and the second Y-branch waveguide; the fourth straight waveguide is connected with a first optical microcavity waveguide; the fifth straight waveguide is connected with a second optical microcavity waveguide; the spot-size conversion waveguide, the first straight waveguide and the first metal electrode jointly form a phase modulator; the fourth straight waveguide, the first optical microcavity waveguide and |
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Bibliography: | Application Number: CN202111340226 |