MEMORY ARRAYS AND METHODS USED IN FORMING A MEMORY ARRAY COMPRISING STRINGS OF MEMORY CELLS

• Main Authors: MEYER RYAN L, LI JIAN, DORHOUT JUSTIN B, TESSARIOL PAOLO
• Format: Patent
• Language: Chinese; English
• Published: 08.02.2022
• Subjects: ELECTRICITY

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks. The pillars are directly against conducting material of conductive lines in the conductive tiers. Other arrays, and methods, are disclosed. 一种包括存储器单元串的存储器阵列包括横向间隔开的存储器块，所述横向间隔开的存储器块各自包括竖直堆叠，所述竖直堆叠包括交替的绝缘层面和导电层面。存储器单元的操作性沟道材料串延伸穿过所述绝缘层面和所述导电层面。绝缘支柱横向处于横向紧邻的所述存储器块之间并且沿着横向紧邻的所述存储器块纵向间隔开。所述支柱直接抵靠所述导电层面中的导电线的导电材料。公开其它阵列和方法。