Method for reducing dark current of indium phosphide-based detector

The invention relates to a method for reducing dark current of an indium phosphide-based detector. The method comprises the following steps: providing an InP substrate, growing N-type InP, a light absorption layer and an undoped InP layer on the InP substrate, photoetching a mask to form a mask laye...

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Bibliographic Details
Main Authors LIAO SHIRONG, KUANG SHIYIN, WAN YUANTAO
Format Patent
LanguageChinese
English
Published 08.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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