Method for reducing dark current of indium phosphide-based detector
The invention relates to a method for reducing dark current of an indium phosphide-based detector. The method comprises the following steps: providing an InP substrate, growing N-type InP, a light absorption layer and an undoped InP layer on the InP substrate, photoetching a mask to form a mask laye...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
08.02.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a method for reducing dark current of an indium phosphide-based detector. The method comprises the following steps: providing an InP substrate, growing N-type InP, a light absorption layer and an undoped InP layer on the InP substrate, photoetching a mask to form a mask layer, and diffusing to form P-type InP; and forming a P-type electrode by adopting an electron beam evaporation or magnetron sputtering mode, and forming an N-type electrode on the back surface, wherein the position of the chip cutting channel is covered by a mask layer. The mask layer is a silicon nitride film or a silicon dioxide film. The mask layer is manufactured by adopting a PECVD process. The method has the beneficial effects that the dark current of the device can be effectively reduced, and the performance of the device is improved.
本发明涉及一种降低磷化铟基探测器暗电流的方法,包括以下步骤:提供InP衬底,在InP衬底生长N型InP,光吸收层、未掺杂的InP层、光刻掩膜形成掩膜层,扩散形成P型InP;采用电子束蒸发或者磁控溅射的方式形成P型电极,在背面形成N型电极;其中,芯片切割道的位置采用掩膜层覆盖。掩膜层为氮化硅薄膜或二氧化硅薄膜。掩膜层采用PECVD工艺制成。本发明的有益之处 |
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Bibliography: | Application Number: CN202111272841 |