Method for reducing dark current of indium phosphide-based detector

• Main Authors: LIAO SHIRONG, KUANG SHIYIN, WAN YUANTAO
• Format: Patent
• Language: Chinese; English
• Published: 08.02.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a method for reducing dark current of an indium phosphide-based detector. The method comprises the following steps: providing an InP substrate, growing N-type InP, a light absorption layer and an undoped InP layer on the InP substrate, photoetching a mask to form a mask layer, and diffusing to form P-type InP; and forming a P-type electrode by adopting an electron beam evaporation or magnetron sputtering mode, and forming an N-type electrode on the back surface, wherein the position of the chip cutting channel is covered by a mask layer. The mask layer is a silicon nitride film or a silicon dioxide film. The mask layer is manufactured by adopting a PECVD process. The method has the beneficial effects that the dark current of the device can be effectively reduced, and the performance of the device is improved. 本发明涉及一种降低磷化铟基探测器暗电流的方法，包括以下步骤：提供InP衬底，在InP衬底生长N型InP，光吸收层、未掺杂的InP层、光刻掩膜形成掩膜层，扩散形成P型InP；采用电子束蒸发或者磁控溅射的方式形成P型电极，在背面形成N型电极；其中，芯片切割道的位置采用掩膜层覆盖。掩膜层为氮化硅薄膜或二氧化硅薄膜。掩膜层采用PECVD工艺制成。本发明的有益之处