METHOD FOR PRODUCING PHOTO SEMICONDUCTOR DEVICE

• Main Author: ERA ATSUSHI
• Format: Patent
• Language: Chinese; English
• Published: 01.02.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention comprises: a step for forming a semiconductor layer on the surface of an n-type InP substrate (10); an etching step for etching a portion of the semiconductor layer to form an active layer ridge (20); a cleaning step for feeding starting gas for crystal growth and etching gas while removing the Si adhering to the surface of the etched semiconductor layer; and a crystal growth step for forming an embedded layer (40) on both sides of the active layer ridge (20) at a treatment temperature that is higher than the temperature of the cleaning step. Cleaning is performed while the ridge shape is maintained. 包括：在n型InP基板(10)的表面形成半导体层的工序；对所述半导体层的一部分进行蚀刻来形成活性层脊(20)的蚀刻工序；边供给结晶生长的原料气体和蚀刻气体，边去除附着于被蚀刻的半导体层的表面的Si的清洁工序；以及在比所述清洁工序中的温度高的处理温度下，在活性层脊(20)的两侧形成埋入层(40)的结晶生长工序，以保持脊形状的状态进行清洁。