Memory element, memory element array, and method for driving memory element

The invention relates to a memory element, a memory element array, and a method for driving the memory element, and provides a memory element comprising a double PN junction and a driving method thereof. The memory element is characterized by comprising at least one semiconductor layer having a doub...

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Bibliographic Details
Main Authors KONG BYOUNG-DON, BAEK CHANG-KI, KIM GA-YOUNG, KIM HYANG-WOO
Format Patent
LanguageChinese
English
Published 28.01.2022
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The invention relates to a memory element, a memory element array, and a method for driving the memory element, and provides a memory element comprising a double PN junction and a driving method thereof. The memory element is characterized by comprising at least one semiconductor layer having a double PN junction, and an anode and a cathode which simultaneously contact the semiconductor layer, wherein a junction between the semiconductor layer and the anode is a Schottky junction, and a junction between the semiconductor layer and the cathode is an Ohmic junction. Further, provided are a capacitor-free memory element including a double PN junction and a control gate, and a method of driving the same. The capacitor-free memory element is characterized by comprising a semiconductor layer including at least one double PN junction; a control gate, which is connected with the semiconductor layer; and an anode and a cathode, which are in contact with the semiconductor layer at the same time, wherein the junction be
Bibliography:Application Number: CN202110829499