Tokamak first wall material laser etching system and etching depth calibration method

• Main Authors: CHEN YONG, HE YANG, DENG XIN, LONG HAICHUAN, LI YUSEN, LIU HAO, QIU CHANGJUN
• Format: Patent
• Language: Chinese; English
• Published: 28.01.2022
• Subjects: MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; PHYSICS; TESTING

The invention discloses a Tokamak first wall material laser etching system and an etching depth calibration method, and relates to the technical field of nuclear fusion devices. The Tokamak first wall material laser etching system comprises a vacuum device, an etching device and an observation device, the vacuum device comprises a vacuum atmosphere chamber, a vacuum pump set and a vacuum gauge; the etching device comprises an etching platform, an optical fiber laser and a main control computer. The Tokamak first wall material etching depth calibration method comprises the following steps: preprocessing; performing ion implantation; obtaining the 13C ion concentration distribution condition before ablation; performing laser etching; calculating the laser etching depth; obtaining the 13C ion concentration distribution condition after laser etching; and establishing a database of the corresponding relationship between the 13C ion concentration and the etching depth. The tracer element 13C is used for calibrating