Double-layer LTPO backboard structure of OLED panel
The invention discloses a double-layer LTPO backboard structure of an OLED panel. The double-layer LTPO backboard structure comprises a substrate, an insulating layer PV1, a GI layer, an insulating layer PV2, an insulating layer PV3 and an organic leveling layer OC; a metal layer M0 is plated on the...
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Format | Patent |
Language | Chinese English |
Published |
25.01.2022
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Abstract | The invention discloses a double-layer LTPO backboard structure of an OLED panel. The double-layer LTPO backboard structure comprises a substrate, an insulating layer PV1, a GI layer, an insulating layer PV2, an insulating layer PV3 and an organic leveling layer OC; a metal layer M0 is plated on the substrate; the insulating layer PV1 covers the metal layer M0; an a-si amorphous silicon layer is plated on the insulating layer PV1; a VIA1 hole is punched in the insulating layer PV1; a metal layer M0.5 is plated on a P + layer; a semiconductor layer covers the GI layer, the P + layer and the metal layer M0.5; a metal layer M1 is plated on the GI layer; the metal layer M1 and the P + layer form a storage capacitor Cst; an insulating layer PV2 covers the metal layer M1; the insulating layer PV2 is coated to form an IGZO semiconductor layer; the GI layer and a metal layer M2 are plated onto the IGZO semiconductor layer; the GI layer separates the metal layer M2 from the IGZO semiconductor layer; an insulating laye |
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AbstractList | The invention discloses a double-layer LTPO backboard structure of an OLED panel. The double-layer LTPO backboard structure comprises a substrate, an insulating layer PV1, a GI layer, an insulating layer PV2, an insulating layer PV3 and an organic leveling layer OC; a metal layer M0 is plated on the substrate; the insulating layer PV1 covers the metal layer M0; an a-si amorphous silicon layer is plated on the insulating layer PV1; a VIA1 hole is punched in the insulating layer PV1; a metal layer M0.5 is plated on a P + layer; a semiconductor layer covers the GI layer, the P + layer and the metal layer M0.5; a metal layer M1 is plated on the GI layer; the metal layer M1 and the P + layer form a storage capacitor Cst; an insulating layer PV2 covers the metal layer M1; the insulating layer PV2 is coated to form an IGZO semiconductor layer; the GI layer and a metal layer M2 are plated onto the IGZO semiconductor layer; the GI layer separates the metal layer M2 from the IGZO semiconductor layer; an insulating laye |
Author | YANG YUANZHI LUO JINGKAI JIA HAO |
Author_xml | – fullname: LUO JINGKAI – fullname: YANG YUANZHI – fullname: JIA HAO |
BookMark | eNrjYmDJy89L5WQwdskvTcpJ1c1JrEwtUvAJCfBXSEpMzk7KTyxKUSguKSpNLiktSlXIT1Pw93F1UShIzEvN4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hobGluZGRkamjsbEqAEAgbAtDw |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | OLED面板的双层LTPO背板结构 |
ExternalDocumentID | CN113972225A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_CN113972225A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 12:48:04 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_CN113972225A3 |
Notes | Application Number: CN202111248576 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220125&DB=EPODOC&CC=CN&NR=113972225A |
ParticipantIDs | epo_espacenet_CN113972225A |
PublicationCentury | 2000 |
PublicationDate | 20220125 |
PublicationDateYYYYMMDD | 2022-01-25 |
PublicationDate_xml | – month: 01 year: 2022 text: 20220125 day: 25 |
PublicationDecade | 2020 |
PublicationYear | 2022 |
RelatedCompanies | MANTIX DISPLAY TECHNOLOGY CO., LTD |
RelatedCompanies_xml | – name: MANTIX DISPLAY TECHNOLOGY CO., LTD |
Score | 3.509431 |
Snippet | The invention discloses a double-layer LTPO backboard structure of an OLED panel. The double-layer LTPO backboard structure comprises a substrate, an... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Double-layer LTPO backboard structure of OLED panel |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220125&DB=EPODOC&locale=&CC=CN&NR=113972225A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFPVNp6LzgwjStyK2aW0eiri0ZcjWFqmyt9F0KX6UdriK4F_vpXbOF81TSCC55LjcR3K_AFzI3GTCMKkuGBU6dYSpo58ldYXO5diUIeNVgvM4tIcP9G5iTTrwssyFaXBCPxpwRJSoDOW9bs7r-SqI5TVvKxeX4hmbqpsgcT2t9Y4NVGeGpXkD148jL-Ia5y4PtfDevVKWjvJtbtdgXZnRCmfffxyorJT5b5US7MBGjKOV9S50Pp96sMWXP6_1YHPcXnhjtZW9xR6YaOuKQupFilYyGSVxRESavYoKeUy-YWDf3ySpchKNfI-glMtiH84DP-FDHWef_ix1ysMVoeYBdMuqlIdADJbntiPNjLGU0muRSoElNWbpzGG2mB1B_-9x-v91HsO22jYVVDCsE-gitfIU1Wwtzpr9-QKyc4CP |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFOebTmXOrwjStyK2Wdc8FHHpytR-IVX2VpouxY-xDjcR_Ou91M35onkKCSSXHJf7SO4XgHNZmEwYJtUFo0KntjB19LOkrtC5bIsyZLxKcA5Ca_BAb4edYQ1elrkwFU7oRwWOiBKVo7zPq_N6ugpiudXbytmFeMam8spLHFdbeMcGqjOjo7k9px9HbsQ1zh0eauG9c6ksHeXbXK_Beleh8yrT6bGnslKmv1WKtw0bMY42me9A7fOpCQ2-_HmtCZvB4sIbqwvZm-2CibauGEt9nKGVTPwkjojI8ldRIo_JNwzs-5skZUEiv-8SlHI53oMzr5_wgY6zpz9LTXm4ItTch_qknMgWEIMVhWVLM2cso7QrMimwZMYoG9nMEqMDaP89Tvu_zlNoDJLAT_2b8O4QttQWqgCD0TmCOlIuj1HlzsVJtVdf3g6DfA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Double-layer+LTPO+backboard+structure+of+OLED+panel&rft.inventor=LUO+JINGKAI&rft.inventor=YANG+YUANZHI&rft.inventor=JIA+HAO&rft.date=2022-01-25&rft.externalDBID=A&rft.externalDocID=CN113972225A |