Double-layer LTPO backboard structure of OLED panel

• Main Authors: LUO JINGKAI, YANG YUANZHI, JIA HAO
• Format: Patent
• Language: Chinese; English
• Published: 25.01.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a double-layer LTPO backboard structure of an OLED panel. The double-layer LTPO backboard structure comprises a substrate, an insulating layer PV1, a GI layer, an insulating layer PV2, an insulating layer PV3 and an organic leveling layer OC; a metal layer M0 is plated on the substrate; the insulating layer PV1 covers the metal layer M0; an a-si amorphous silicon layer is plated on the insulating layer PV1; a VIA1 hole is punched in the insulating layer PV1; a metal layer M0.5 is plated on a P + layer; a semiconductor layer covers the GI layer, the P + layer and the metal layer M0.5; a metal layer M1 is plated on the GI layer; the metal layer M1 and the P + layer form a storage capacitor Cst; an insulating layer PV2 covers the metal layer M1; the insulating layer PV2 is coated to form an IGZO semiconductor layer; the GI layer and a metal layer M2 are plated onto the IGZO semiconductor layer; the GI layer separates the metal layer M2 from the IGZO semiconductor layer; an insulating laye