Method for producing silicon carbide epitaxial wafer

• Main Authors: NAKAMURA TAKUYO, SAKAI MASA, MIZOBE TAKUMA
• Format: Patent
• Language: Chinese; English
• Published: 21.01.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Provided is a method for producing a silicon carbide epitaxial wafer, which is suitable for suppressing the occurrence of triangular defects. This method for producing the silicon carbide epitaxial wafer comprises: an etching step for etching the surface of a silicon carbide substrate at a first temperature using an etching gas containing H2; a planarization processing step of planarizing the surface etched in the etching step at a second temperature using a gas containing H2 gas, a first Si supply gas, and a first C supply gas; and an epitaxial layer growth step of performing epitaxial growth at a third temperature using a gas containing a second Si supply gas and a second C supply gas on the surface planarized by the planarization processing step, the first temperature T1, the second temperature T2, and the third temperature T3 satisfying T1>T2>T3. 提供适于抑制三角缺陷的产生的碳化硅外延晶片的制造方法。碳化硅外延晶片的制造方法具有：蚀刻工序，使用包含H2的蚀刻气体而在第一温度下对碳化硅基板的表面进行蚀刻；平坦化处理工序，使用包含H2气、第一Si供给气体和第一C供给气体的气体在第二温度下使在蚀刻工序中被蚀刻的表面平坦化；以及外延层生长工序，在通过平坦化处理工序而被平坦